GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano The pressing die is made

The pressing die is made of high-stretched and highly polished carbon steel to achieve high hardness to meet the essential requirements of making ceramic or metal samples

so never press the red or green button in this period

crystal purity:  >99

High-purity alumina coating on refractory ceramics for longer service life

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp Nano The pressing die is madeGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 01 6. 30) x 10^17 cm^3 Mobility: 184 200cm^2 V. S EPD: <5000 cm^2 resistivity: (5. 14 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces