NdGaO3 (001) 10x10x0.5 mm, 2 SP - NGOb101005S2 Cathode Wafer size: 1" X1"X0

Wafer size: 1" X1"X0

014" thickness x 1/2" arbor)

Boiling Point:         2467°C

Doping:                                  Sb doped

NdGaO3 (001) 10x10x0.5 mm, 2 SP - NGOb101005S2 Cathode Wafer size: 1" X1"X0Single crystal NdGaO3 Substrate Size: 10mm x 10mm x 0. 5 mm Orientation: (001) Polishing: two sides side polished. Surface roughness: < 5A Packing: in 1000 class clean room with plastic bagTypical Properties of NdGaO3 Structure: Orthohombic Lattice Constant(): a=5. 43 b=5. 50 c=7. 71 Melting Point: 1600 oC Density: 7. 57 g cm3 Thermo expansion: 7. 89 x10 6 k Dielectric constant 25 Loss tangent 3x10 3 Hardness 5. 9 ( Mohs) Customers Who Bought This